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Spansion 256M MirrorBit (1.8V) NOR Flash

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Device Description

Insight Award Nominee (2005) Insight Award Nominee (2005) - Most Innovative Non-Volatile Memory

The Spansion 1.8V 256Mb MirrorBit NOR flash is Spansion's first 1.8V Wireless part using NROM technology in a 110nm process. It features 90ns random access time and 25ns page read. The part has a small die size of 50mm^2. With the highest memory array efficiency in the NOR flash industry, similar to NAND flash in 120nm, Spansion is also showing that it will be able to use the same NROM technology to address NAND markets.

Part Number: WS256NOLBAW01

Insight Report


Insight Report: Spansion 1.8V MirrorBit NOR in 110nm Process
(requires registration)

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Device Analysis
This device is analysed in detail in the following reports. Click on any report title for details of each report or select the reports you're interested in and submit a request for more information below.

    		• CircuitVision Analysis on the Memory Array and Peripherals of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Detailed Structural Analysis I including Process Flow and Mask Count of the Spansion GL512N11FAE01 512M MirrorBit(TM) Flash in 0.11µm Technology
    		• Detailed Structural Analysis I of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Device Comparison of the Spansion .23µm, 110nm 3V, and 110nm 1.8V MirrorBit Generations
    		• Internal Waveform Analysis of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Internal Waveform Analysis of the Spansion GL512N11FAE01 512M MirrorBit(TM) Flash in 0.11µm Technology
    		• Key Feature Analysis of Full Data Path on the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Key Feature Analysis of Selected Address Path Circuits on the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Key Feature Analysis of the Memory Array and Peripherials on the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Key Feature Analysis on the Memory Array and Peripherals of the Spansion GL512N11FAE01 512M MirrorBit(TM) Flash in 0.11µm Technology
    		• Key Feature Analysis on the Partial Address Path and Partial Datapath of the Spansion GL512N11FAE01 512M MirrorBit(TM) Flash in 0.11µm Technology
    		• Memory Functional Layout of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Memory Functional Layout of the Spansion GL512N11FAE01 512M MirrorBit(TM) Flash in 0.11µm Technology
    		• Memory Quick Look of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Quick Look II of the Spansion 1.8V MirrorBit 256M NOR Flash in 110nm Technology
    		• Quick Look II of the Spansion GL512N11FAE01 512M MirrorBit(TM) NOR Flash in 0.11µm Technology

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