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Toshiba 8G (2x4Gb) 90nm MLC NAND Flash

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Device Description

Insight Award Nominee (2005) Insight Award Nominee (2005) - Most Innovative Non-Volatile Memory
Insight Award Nominee (2005) Insight Award Nominee (2005) - Most Innovative Non-Volatile Memory

Toshiba has leveraged their leadership position in the high density NAND flash memory market by releasing the 4Gb (die) MLC NAND flash EEPROM in 90nm process technology. While multi-chip modules are capable of achieving 4Gb, this is the industry’s first single-die, multi-level cell NAND flash memory to achieve the 4Gb capacity. MLC technology is a difficult task, and when this is combined with a 90nm process it is even more so as determining voltage levels requires intricate design.

Part Number: TH58NVG3D4BTGI0

Insight Report


Insight Report: Toshiba 2x4Gb MLC NAND Flash
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Device Analysis
This device is analysed in detail in the following reports. Click on any report title for details of each report or select the reports you're interested in and submit a request for more information below.

    		• Internal Waveform Analysis of the Toshiba TH58NVG3D4BTGI0 4Gb 90nm MLC NAND Flash Memory
    		• Key Feature Analysis on the Memory Array and Peripherals of the Toshiba TH58NVG3D4BTGI0 4Gb 90nm MLC NAND Flash Memory
    		• Memory Detailed Structural Analysis of the Toshiba TH58NVG3D4BTGI0 4Gb 90nm MLC NAND Flash Memory
    		• Memory Functional Layout of the Toshiba TH58NVG3D4BTGI0 4Gb 90nm MLC NAND Flash Memory
    		• Memory Quick Look of the Toshiba TH58NVG3D4BTGI0 2x4Gb 90nm MLC NAND Flash Memory

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