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Samsung 1G DDR2 SDRAMThis is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 56nm DRAM process technology.
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Hynix 1G DDR2 DRAMThis is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 54nm DRAM process technology.
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Qualcomm Snapdragon Mobile ProcessorThe Qualcomm Snapdragon allows the mobile device vendors to escalate the latest handset market trend to enable laptop experience on handsets. It leads the industry in functionality, performance, power efficiency and footprint.
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Toshiba 16G 43nm MLC NAND FlashThe new architecture, ABL (All BitLine architecture), achieves higher program and read throughput by activating both even & odd bitline simultaneously. Reduced supply voltage for the I/O buffer helps integrating this product with chips in a system
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Hynix 1G DDR3 Synchronus DRAMThe smaller process node offers substantial benefits, lower power consumption, heat dissipation and cost to manufacture. The die size is only 7% larger, helping DDR3 DRAM reach a competitive price point to become mainstream in the marketplace
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Intel SILVERTHORNE Intel Atom ProcessorThe 45nm Intel® Atom™ processors pack an astounding 47 million transistors on a single chip measuring less than 26mm², making them Intel's smallest and lowest power processors. All this while delivering the power and performance you need
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STMicroelectronics Low Power 3-axis AccelerometerThe complete device includes a sensing element and an IC interface able to take the information from the sensing element and to provide a signal to the external world through an I2C/SPI serial interface.
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Qualcomm Applications ProcessorQualcomm MSM7201A's new capabilities include; an integrated ARM11-based application processor, high-speed HSDPA/HSUPA wireless connectivity, blazing fast WVGA video performance and stunning 2D & 3D graphics acceleration
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Texas Instruments OMAP3530 Baseband Applications ProcessorThe heart of this new device is the ARM Cortex along with the other major subsystems. Die utilization has improved dramatically allowing TI to substantially increase performance, while achieving a 30% die area reduction compared to the 90nm OMAP2420
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Spansion 2G 65nm MirrorBit ORNANDThe Spansion 65nm 2Gb MirrorBit ORNAND is an important step for the organization. It continues their commitment to deliver a process lithography shrink every year for the past 3 years.
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Hynix 8G MLC NAND Flash (57nm process node technology)Hynix’s 57nm 8Gb MLC NAND Flash has an extra interconnect layer increasing the mask count number. They have also implemented a new die floor plan, with a one-sided pad arrangement and a one-sided buffer arrangement to help reduce the die area used.
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Samsung 1G 68nm DDR2 SDRAMThe 68nm device from Samsung is the smallest process lithography DRAM from Samsung analyzed by Semiconductor Insights to date with a 13.7Mb/mm2 rating.
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IM Flash Technologies 16G MLC NAND FlashWhile it has been over a year since the previous 4Gb SLC NAND Flash from IM Flash Technologies entered the market, the company maintains the smallest process lithography at this time, measuring only 50nm.
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Hynix 1G DDR2 SDRAMThe 66nm device from Hynix is the smallest DRAM process component analyzed by SI to date. Smaller process geometries help to reduce power consumption in the chip enabling less heat produced, lower cooling costs, and quieter system operation.
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Spansion 2G MirrorBit Quad FlashThe first NOR flash from Spansion to use MirrorBit Quad technology – an architecture that stores four-bits-per-cell. MirrorBit Quad doubles the density of MirrorBit with the added ability to store different charge states in each of the two locations.
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Intel Penryn 45nm ProcessorIntel’s 45nm Penryn processor is an engineering milestone, with a small process lithography and high K gate dielectrics. Intel claims this can deliver >20% increase in transistor switching speed and reduce transistor gate leakage by over 10X.
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Panasonic 45nm UniPhier system LSITo achieve a 45nm process node Matsushita has used 193nm immersion lithography, stress-induced mobility-enhanced transistors, low-k dielectrics and design-for-manufacturability technologies.
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Marvell Semiconductor 802.11 a/b/g RF IC TransceiverThe Marvell 88W8686, found in the Apple iPhone, integrates an ARM-compliant CPU, high-speed serial host interfaces including SDIO and SPI, and advanced 802.11 a/b/g RF transceiver with full cellular coexistence.
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Hynix 8G 60nm NAND FlashThe latest NAND Flash product offered by Hynix is in their 60nm process technology. The HY27UT088G2M is 8Gb MLC NAND Flash.
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UPEK Touchstrip® Fingerprint Authentication SolutionTouchstrip® Fingerprint Authentication Solution consists of a TouchStrip Fingerprint Sensor (TCS3) and the Digital ID Hardware Engine (TCD42) IC for a biometric solution that guards against peripheral and PC hacking attempts.
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Qualcomm RFR6202 ReceiverA component in Qualcomm's radioOne RF solution, the RFR6202 receiver works to support Dual-band WCDMA (UMTS). Operating at UMTS 800 and 2100MHz, the RFR6202 works with the RFL6202 and RTR6250 to complete the radioOne solution.
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NXP Semiconductors TV TunerNXP's TDA6650 is a single-chip mixer/oscillator & low phase noise PLL synthesizer for tuners dedicated to hybrid and pure digital applications. This tuner is used in digital/analog terrestrial and cable tuners, digital TV sets and set-top boxes.
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Maxlinear MXL5005 Terrestrial TunerDeveloped by MaxLinear, the MxL5005 is a global standards silicon tuner developed for applications such as mobile devices, laptops, set top boxes and automotive applications like telematics.
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Sony ICX629 Image SensorHigh-Resolution Diagonal 7.208 mm (Type 1/2.5) 7.24M-Effective Pixel Digital Still Camera CCDs for Consumer Products Support VGA Resolution Moving Picture Imaging
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Samsung 1G DDR3 SDRAMSamsung's 80nm DDR3 DRAM cell is an 8F2 cell with a metal-insulator-metal (MIM) capacitor. It uses a spherical recess-access transistor with a gate length of 47nm. The wordline width/pitch are 47nm/165nm, with a bitline width/pitch are 40nm/160nm.
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Zoran COACH9 Digital Camera ProcessorThe Coach 9 includes several on-chip features, and firmware capabilities that enable applications such as picture-in-picture, audio annotation, and sound effects.
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Qualcomm TransceiverQualcomm’s RTR6285 is the first single-chip UMTS radio-frequency (RF) CMOS transceiver with receive diversity and GPS. In addition, the multi-band UMTS and quad-band EGPRS features allow for global roaming.
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Hynix 512M 80nm DDR2 SDRAMThe Hynix HY5PS12821C 512Mb DDR2 SDRAM has a die size 56mm2. The device is fabricated in a three metal, four poly stacked capacitor DRAM process employing recessed channel array transistors similar to the RCAT developed by Samsung.
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Samsung 512M 80nm Rev ''E'' DDR2 SDRAMSamsung continues its DRAM dominance with a bit density of 10.9Mb/mm2. 6F2 cell design along with the next generation of trench channel access transistor – SRCAT – provides Samsung the smallest cell size ever recorded at 0.0375 square microns.
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Kaneka Thin-Film Silicon Photovoltaic Module (Solar Panel)Kaneka Silicon PV's generated watt-power is approximately same as that of other crystalline silicon PVs during the winter months, but in summer the Kaneka Silicon PV generates significantly more power compared to other crystalline silicon PVs.
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