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Micron MT9D011 CMOS Image Sensor awarded Most Innovative Image SensorFOR IMMEDIATE RELEASE: OTTAWA, September 20, 2005 - Semiconductor Insights (SI), the leader in technical and patent analyses of integrated circuits and electronic systems, today announced that it has awarded Micron’s 2-Megapixel CMOS Image Sensor the 2005 INSIGHT Award for Most Innovative Image Sensor. "Micron has raised the bar in image sensors, from both a density and a quality perspective", said Edward Keyes, Vice President and CTO for SI. "Micron is the first to commercialize a 2.5T design by sharing pixel transistors between adjacent pixels. Sharing significantly increases the fill factor over traditional 4T designs. It allows Micron to significantly shrink their pixel yet still meet the required signal-to-noise level." The MT9D011 uses a shared floating diffusion design typical of the Micron CMOS image sensors. With the help of this design and the integration of the PiP capacitor onto the source follower gate, Micron was able to reduce the pixel cell size from 3.2µm x 3.2µm to 2.8µm x 2.8µm, resulting in a 40% fill factor. This sensor provides the best light capturing efficiency in the industry. High fill factors are a must for CMOS sensors to completely displace CCD technology. Improving the fill factor for an active pixel structure like CMOS means reducing transistor count at each site. Without that transistor reduction, pixel scaling can’t continue. Additional Information:
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