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Semiconductor Insights Confirms Intel and Micron First to 50nm NAND FlashFOR IMMEDIATE RELEASE: San Jose, California, August 8, 2006 — Semiconductor Insights (SI), the world’s leading technical advisor to the global microelectronics industry, today confirmed they are evaluating production ready 50nm NAND Flash from IM Flash Technologies (IMFT), the joint venture between Intel and Micron. "Our preliminary analyses of the device has confirmed a 50nm gate length in the wordline pitch," stated Geoff MacGillivary, SI’s lead memory analyst. "This is the most advanced flash part we've seen to date and we are impressed that IMFT has been able to ramp up so quickly to such a small lithography process technology." SI analyzes hundreds of memory devices a year, including the latest NAND flash offerings from all the major vendors. "Prior to the availability of IM Flash Technologies' 50nm part, Samsung’s 65nm 4Gb NAND Flash led Single Level Cell (SLC) memory’s density cost equation at 31.3Mb/mm². IMFT now leads the space at 41.8Mb/mm² and has a die size more than 30% smaller than Samsung. "The only device that exceeds IMFT’s solution is Toshiba’s 70nm 8Gb NAND Flash at 56.53Mb/mm², due to its Multi Level Cell (MLC) implementation. However, this is accomplished in a die nearly 50% larger than IMFT’s, which affects the total cost to manufacture", said MacGillivray. "The largest memory technology debate used to be around NOR/NAND, but this has shifted to SLC versus MLC, comparing design advantages between advanced process technologies and density. It will be interesting to see what future plans IMFT has for implementing their advanced process lithography using MLC design techniques." Additional Information: About Semiconductor Insights — A Division of UBM |
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