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What's New!
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New Reports
We have listed some of the new and noteworthy reports we have published. If you are interested
in learning about our findings or discussing custom analyses, please contact us.
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Key Feature Analysis on the Pixel, Readout and CDS Circuits, Row Drivers and Regulator of the STMicroelectronics STMVS6750 2 Megapixel CMOS Image Sensor
SI’s Key Feature Analysis on the STMicroelectronics STMVS6750 2 Megapixel CMOS Image Sensor includes details on the full data path. The analysis consists of the areas: row drivers, ramp, reference and CCP2 TX blocks, mixed signal block, and CDS and data conversion.
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Internal Waveform Analysis of the Toshiba TC58NVG3D4CTG00 70nm 8Gb MLC NAND Flash
The probing analysis on the Toshiba 70nm 8Gb MLC NAND Flash will provide details of the programming algorithm and in the internal voltages required to read, program, and erase the cells at the ranges between the reference threshold voltages. The probing analysis tests the flash in an active probe arrangement and voltage traces of the signals are recorded during program, erase, and read operations.
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Key Feature Analysis on the Array and Peripherals, HV Switches and High Voltage Pump of the Toshiba TC58NVG3D4CTG00 70nm 8Gb MLC NAND Flash
The Key Feature Analysis of the Memory Array and Peripherals looks at the key elements of the design of the memory array core and peripheral circuitry. The report will investigate the innovations in the memory array and peripherals, the shrinking of which is key to optimization of die size/cost structure. The report will include schematics and layout information for the sense amplifiers and wordline drivers along with layout information for the array, bitline structure and wordline structure. The report also includes general information about the die and package.
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Memory Detailed Structural Analysis of the Samsung K9F4G08U0A 65nm 4Gb NAND Flash
This report is a detailed analysis of the Samsung K9F4G08U0A flash array structure and fabrication processes. Information includes the package, die features, and bond pads, analysis of the process technology beginning with the passivation and ending with the substrate, analysis of the flash array (both topographically and in cross-sections) together with topographical analysis of bitline and wordline pitch circuitry, critical vertical and horizontal dimensions, and major findings.
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Memory Detailed Structural Analysis of the Micron Technology MT46H32M16 6F2 95nm Mobile DDR SDRAM
Micron’s latest 6F² Mobile SDRAM pushes the lithography dimensions to 95nm, boasting the smallest 6F² design. Micron’s new design will put more pressure on other manufacturers to move to 6F² technology ahead of ITRS roadmap projections. Not only that, but vendors will have to work hard to learn from Micron’s designs to offer a competitive product.
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Memory Detailed Structural Analysis of the Samsung K4S561632H-UC75 6F2 110nm 256Mb SDRAM
Samsung’s first 6F2 offering has the smallest cell size of any 100nm or 110nm DRAM device analyzed by Semiconductor Insights. In addition the cell size is comparable to 90nm DRAM cell sizes but is able to achieve this cell size with more relaxed process geometries. Samsung has also taken the vertical channel array transistor design and migrated it from their 8F2 devices to the 6F² offering.
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Flash Component Subscription Service Q1 2006 Rollup - Preferred
The Flash Memory Component (FMC) subscription service provides valuable insight into press releases from Micron and Intel, Spansion, and STMicroelectronics. Product analysis, including a device summary table and high quality images of the die and package, are given for Intel 64Mb 90nm Wireless Flash, Intel 512Mb 90nm StrataFlash, Toshiba 512Mb NAND Flash, and Samsung 4Gb 90nm MLC NAND Flash. A rolling 36 month graph for both NOR and NAND is shown. The executive summary of a recent device investigation is on the Step Gate (SG) sensing architecture found in the Intel 512Mb 90nm MLC NOR Flash Memory.
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