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The smaller process node offers substantial benefits, lower power consumption, heat dissipation and cost to manufacture. The die size is only 7% larger, helping DDR3 DRAM reach a competitive price point to become mainstream in the marketplace Hynix’s ability to design and manufacture very efficient commodity DRAM devices including DDR3 is evident in this device. The DDR3 die area overhead, which was more than 22% when DDR3 devices were initially announced about two years ago, has been reduced down to 7% with this device. Given that Hynix uses 8F2 DRAM cell design, this overhead and competitive chip size would be of interest to anyone who wants to benchmark Hynix’s innovations in design and manufacturing the most advanced DDR3 devices
Part Number: H5TQ1G83AFP
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