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Toshiba 16G 43nm MLC NAND Flash

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Device Description

The new architecture, ABL (All BitLine architecture), achieves higher program and read throughput by activating both even & odd bitline simultaneously. Reduced supply voltage for the I/O buffer helps integrating this product with chips in a system

This latest 43nm process node product features 16Gbit of non-volatile memory storage with 120mm2 of chip size. Compared to the Toshiba’s previous generation 56nm 16Gbit MLC NAND Flash product (TC58NVG4D1DTG00), this new device is 30% smaller in chip size. This efficient chip size of the 43nm 16Gbit MLC NAND Flash realizes a 2GBI single chip micro SD memory card

Part Number: TC58NVG4D2ETA10

Insight Report


Toshiba 16G 43nm MLC NAND Flash
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Device Analysis
This device is analysed in detail in the following reports. Click on any report title for details of each report or select the reports you're interested in and submit a request for more information below.

  • Circuit Vision Analysis of the Array and Peripherals, Wordline Switches, High Voltage Switches and High Voltage Pumps on the Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash (Engineering Sample)
  • Circuit Vision Analysis of the Memory Array and Peripherals on the Toshiba TC58NVG4D2ETA00 43nm 16Gbit MLC NAND Flash
  • Custom Structural Analysis including TEM/EELS analysis of the Toshiba TC58NVG4D2ETA10 43nm 16G MLC NAND Flash Tunnel Oxide
  • Memory Detailed Structural Analysis of the Toshiba TC58NVG4D2ETA10 16Gb 43nm MLC NAND Flash

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