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The new architecture, ABL (All BitLine architecture), achieves higher program and read throughput by activating both even & odd bitline simultaneously. Reduced supply voltage for the I/O buffer helps integrating this product with chips in a system This latest 43nm process node product features 16Gbit of non-volatile memory storage with 120mm2 of chip size. Compared to the Toshiba’s previous generation 56nm 16Gbit MLC NAND Flash product (TC58NVG4D1DTG00), this new device is 30% smaller in chip size. This efficient chip size of the 43nm 16Gbit MLC NAND Flash realizes a 2GBI single chip micro SD memory card
Part Number: TC58NVG4D2ETA10
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