What's New! News New Devices Events			View Cart ()   Checkout   MySI Account       What's New New Devices Find Reports Samsung 1G DDR2 SDRAM  New Devices RSS Feed Device Description This is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 56nm DRAM process technology. The 56nm process node device has 1Gbit of memory and achieved an impressive die area efficiency with 23.3Mbits per mm2.This is 3% more efficient than that of the Hynix 54nm 1Gbit DDR2 SDRAM. With only 3 layers of metal interconnect and the smallest 1Gbit DDR2 die size, this 1Gbit DDR2 SDRAM helps the manufacturer remain very competitive Part Number: K4T1G164QE-HCE6 Insight Report Samsung 56nm 1Gbit DDR2 SDRAM (requires registration) Related Reports Samsung DRAM Device Analysis This device is analysed in detail in the following reports. Click on any report title for details of each report or select the reports you're interested in and submit a request for more information below. Engineering Report on the Scanning Capacitance of the Samsung K4T1G164QE-HCE6 56nm DRAM Memory Detailed Structural Analysis of the Samsung K4T1G164QE 56nm 1Gbit DDR2 SDRAM Request More Information Name (First/Last)  *  * Company  * Email  * Postal Code/ ZIP  * Role Select One Corporate IP/Licensing Professional Engineer (Design) Engineer (Process) Engineer (Design and Process) Executive Financial Analyst Law Firm & IP Consultant Media / Industry Analyst Product Line Management & Mkt Other  *   Enter the word displayed:  Load New Code  * Telephone +1 (613) 599-6500 Regional Representatives * Required fields Comments *   Please send more information about Samsung 1G DDR2 SDRAM. Check this box to join our mailing list