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Hynix 1G DDR2 DRAM

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Device Description

This is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 54nm DRAM process technology.

This is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 54nm DRAM process technology. Despite lack of 6F2 cell technology, the manufacturer has achieved an impressive die area efficiency of 22.7Mbits per mm2, which is very close to its archrival Samsung’s 23.3Mbies per mm2.

Part Number: H5PS1G83EFR

Insight Report


Hynix 54nm 1Gbit DDR2 SDRAM
(requires registration)

Related Reports
Hynix
DRAM

Device Analysis
This device is analysed in detail in the following reports. Click on any report title for details of each report or select the reports you're interested in and submit a request for more information below.

  • CircuitVision Analysis of the Full Chip of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Address Path of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Array and Peripheral of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Clocking and DLL of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Command, Control and Test Circuitry of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Data Path of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Internal Voltage Regulators of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the VBB Pump and Regulator of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the Voltage Generator System of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • CircuitVision Analysis on the VPP Pump and Regulator of the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM
  • Memory Detailed Structural Analysis on the Hynix H5PS1G83EFR 54nm 1Gb DDR2 SDRAM

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